Effects of mesa area and orientation on defects in strained InxGa1−xAs films grown by LPOMCVD
Identifieur interne : 000384 ( Main/Exploration ); précédent : 000383; suivant : 000385Effects of mesa area and orientation on defects in strained InxGa1−xAs films grown by LPOMCVD
Auteurs : RBID : ISTEX:11664_1991_Article_BF02665956.pdfEnglish descriptors
Abstract
We have selectively grown InxGa1−xAs (0.04
DOI: 10.1007/BF02665956
DOI: 10.1007/BF02665956
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Jones</name><affiliation wicri:level="1"><mods:affiliation>Department of Electrical Engineering University of Virginia, Semiconductor Device Laboratory, 22901, Charlottesville, Virginia, USA</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>Department of Electrical Engineering University of Virginia, Semiconductor Device Laboratory, 22901, Charlottesville, Virginia</wicri:regionArea><wicri:noRegion>Virginia</wicri:noRegion></affiliation></author><author><name>M. F. Zybura</name><affiliation wicri:level="1"><mods:affiliation>Department of Electrical Engineering University of Virginia, Semiconductor Device Laboratory, 22901, Charlottesville, Virginia, USA</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>Department of Electrical Engineering University of Virginia, Semiconductor Device Laboratory, 22901, Charlottesville, Virginia</wicri:regionArea><wicri:noRegion>Virginia</wicri:noRegion></affiliation></author><author><name>L. K. Seidel</name><affiliation wicri:level="1"><mods:affiliation>Department of Electrical Engineering University of Virginia, Semiconductor Device Laboratory, 22901, Charlottesville, Virginia, USA</mods:affiliation><country xml:lang="fr">États-Unis</country><wicri:regionArea>Department of Electrical Engineering University of Virginia, Semiconductor Device Laboratory, 22901, Charlottesville, Virginia</wicri:regionArea><wicri:noRegion>Virginia</wicri:noRegion></affiliation></author><author><name>D. K. Oh</name><affiliation wicri:level="1"><mods:affiliation>Electronics and Telecommunications Research Institute, Daeduk Science Town, 302-350, Daejeon, Korea</mods:affiliation><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Electronics and Telecommunications Research Institute, Daeduk Science Town, 302-350, Daejeon</wicri:regionArea><wicri:noRegion>Daejeon</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:11664_1991_Article_BF02665956.pdf</idno><date when="1991">1991</date><idno type="doi">10.1007/BF02665956</idno><idno type="wicri:Area/Main/Corpus">000239</idno><idno type="wicri:Area/Main/Curation">000239</idno><idno type="wicri:Area/Main/Exploration">000384</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Misfit dislocation</term><term>OMCVD</term><term>Patterned substrate epitaxy</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">We have selectively grown InxGa1−xAs (0.04 </div> </front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="2763dbff923141d30626cdc614143eefbc52787a"><titleInfo lang="eng"><title>Effects of mesa area and orientation on defects in strained InxGa1−xAs films grown by LPOMCVD</title></titleInfo><name type="personal"><namePart type="given">J. 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